MUN5214DW1T1

Maximum Operating Frequency :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Typical Input Resistor : 10 KOhms
Configuration : Dual
Peak DC Collector Current : 100 mA
Continuous Collector Current : 0.1 A
Package / Case : SOT-363-6
Typical Resistor Ratio : 0.21
Power Dissipation : 187 mW


Features:

• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel


Specifications

Rating	Symbol	Value	Unit
Collector-Base Voltage	VCBO	50	Vdc
Collector-Emitter Voltage	VCEO	50	Vdc
Collector Current	IC	100	mAdc

Description

The MUN5214DW1T1 BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5214DW1T1 series, two BRT devices are housed in the SOT?363 package which is ideal for low power surface mount applications where board space is at a premium.

Parameters:

Technical/Catalog Information	MUN5214DW1T1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	2 NPN - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Power - Max	385mW
Resistor - Base (R1) (Ohms)	10K
Resistor - Emitter Base (R2) (Ohms)	47K
Vce Saturation (Max) @ Ib, Ic	250mV @ 300A, 10mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
Frequency - Transition	-
Mounting Type	Surface Mount
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MUN5214DW1T1 MUN5214DW1T1