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MUN5212DW1T1G

Transistors Switching (Resistor Biased) 100mA 50V BRT Dual NPN

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MUN5212DW1T1G: Transistors Switching (Resistor Biased) 100mA 50V BRT Dual NPN

MUN5212DW1T1G Data Sheet

floor Price/Ceiling Price

US $ .06~.22 / Piece | Get Latest Price
Part Number:
MUN5212DW1T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.22
  • $.11
  • $.08
  • $.06
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : NPN
Typical Input Resistor : 22 KOhms Typical Resistor Ratio : 1
Mounting Style : SMD/SMT Package / Case : SOT-363-6
Collector- Emitter Voltage VCEO Max : 50 V Continuous Collector Current : 0.1 A
Peak DC Collector Current : 100 mA Power Dissipation : 187 mW
Maximum Operating Temperature : + 150 C Packaging : Reel    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Configuration : Dual
Typical Input Resistor : 22 KOhms
Peak DC Collector Current : 100 mA
Typical Resistor Ratio : 1
Continuous Collector Current : 0.1 A
Package / Case : SOT-363-6
Power Dissipation : 187 mW


Parameters:

Technical/Catalog InformationMUN5212DW1T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type2 NPN - Pre-Biased (Dual)
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max385mW
Resistor - Base (R1) (Ohms)22K
Resistor - Emitter Base (R2) (Ohms)22K
Vce Saturation (Max) @ Ib, Ic250mV @ 300A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Frequency - Transition-
Mounting TypeSurface Mount
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MUN5212DW1T1G
MUN5212DW1T1G



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