MUN5112DW1T1

Maximum Operating Frequency :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 50 V
Transistor Polarity : PNP
Configuration : Dual
Typical Input Resistor : 22 KOhms
Peak DC Collector Current : 100 mA
Typical Resistor Ratio : 1
Package / Case : SC-88-6
Continuous Collector Current : - 0.1 A
Power Dissipation : 250 mW
Packaging : Tube


Features:

• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel.


Specifications

Rating	Symbol	Value	Unit
Collector-Base Voltage	VCBO	50	Vdc
Collector-Emitter Voltage	VCEO	50	Vdc
Collector Current	IC	100	mAdc

Description

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5112DW1T1 series, two BRT devices are housed in the SOT363 package which is ideal for lowpower surface mount applications where board space is at a premium.