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MTY55N20E

Features: • Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol Value Unit DraintoSource Voltage VDSS 200 Vdc DraintoGate Voltage (RGS = 1.0 M)...

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MTY55N20E: Features: • Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol ...

MTY55N20E Data Sheet

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Part Number:
MTY55N20E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
200
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
200
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive(tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
- Continuous @ Tc = 25°C
- Single Pulse (tp 10 s)
ID
IDM
55
165
Adc
Apk
Total Power Dissipation
Derate above 25°C
PD
300
2.38
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =80Vdc,VGS = 10Vdc, Vdc,Peak IL =110 Apk, L =0.3mH, RG = 25)
EAS
3000
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
0.42
40
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.


Description

This MTY55N20E is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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