Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Isolated Mounting Hole Reduces Mounting Hardw...
MTW45N10E: Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDS...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Rating | Symbol | Value | Unit |
DraintoSource Voltage | VDSS | 100 | Vdc |
DraintoGate Voltage (RGS = 1.0 MW) | VDGR | 100 | Vdc |
GatetoSource Voltage - Continuous |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp 3 10 ms) |
ID ID IDM |
45 34.6 135 |
Adc Apk |
Total Power Dissipation Derate above 25°C |
PD |
180 1.44 |
Watts |
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25 ) |
EAS | 810 | mJ |
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient |
RqJC RqJA |
0.70 62.5 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds | TL | 260 | °C |
Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C |
This MTW45N10E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these MTW45N10E are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.