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MTSF3N02HDR2

Features: • Miniature Micro8 Surface Mount Package - Saves Board Space• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life• Logic Level Gate Drive - Can Be Driven by Logic ICs&#...

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SeekIC No. : 004430886 Detail

MTSF3N02HDR2: Features: • Miniature Micro8 Surface Mount Package - Saves Board Space• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards• Ultra Low RDS(on) Provides Hig...

MTSF3N02HDR2 Data Sheet

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Part Number:
MTSF3N02HDR2
Supply Ability:
5000

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  • 15 Days
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Upload time: 2024/11/26

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Product Details

Description



Features:

• Miniature Micro8 Surface Mount Package - Saves Board Space
• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
DraintoSource Voltage VDSS 20 V
DraintoGate Voltage (RGS = 1.0 MW) VDGR 20 V
GatetoSource Voltage - Continuous
 VGS
 ±8
V
1 inch SQ.
FR4 or G10 PCB
Figure 1 below
Steady State		 Thermal Resistance - Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current - Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)		 RTHJA
PD
ID
ID
IDM		 70
1.79
14.29
6.1
4.9
49		 °C/W
Watts
mW/°C
A
A
A
Minimum
FR4 or G10 PCB
Figure 2 below
Steady State		 Thermal Resistance - Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current - Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)		 RTHJA
PD
ID
ID
IDM		 160
0.78
6.25
4.0
3.2
32		 °C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C
(1) Repetitive rating; pulse width limited by maximum junction temperature.


Description



MTSF3N02HDR2 is an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. The MTSF3N02HDR2 is capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MTSF3N02HDR2 is designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. The MTSF3N02HDR2 can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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