Position: Home  > All Categories> Integrated Circuits (ICs) > MTP9N50E

MTP9N50E

Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol Value Unit Dr...

product image

MTP9N50E Picture
See larger image
SeekIC No. : 004430867 Detail

MTP9N50E: Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDS...

MTP9N50E Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MTP9N50E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a
   Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Rating Symbol Value Unit
DraintoSource Voltage VDSS 250 Vdc
DraintoGate Voltage (RGS = 1.0 MW) VDGR 250 Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)		 VGS
VGSM		 +20
+40		 Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 ms)		 ID
ID
IDM		 9.0
5.7
32		 Adc

Apk
Total Power Dissipation
Derate above 25°C		 PD 80
0.64		 Watts
W/°C
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 3.0 mH, RG = 25		 EAS 122 mJ
Thermal Resistance - Junction to Case
- Junction to Ambient		 RqJC
RqJA		 1.56
62.5		 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 secon TL 260 °C



Description

The MTP9N50E is designed to withstand high energy in the avalanche and commutation modes. The MTP9N50E also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP9N50E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
View more