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MTP4N80E

Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 800 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 800 Vdc GateSource Voltage- Continuous- NonRepetitive (tp10ms) VGSVGSM ±20±40 VdcVpk Drain - Continuous- Continuous @ 100°C- Single...

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SeekIC No. : 004430838 Detail

MTP4N80E: Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 800 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 800 Vdc GateSource Voltage- Continuous- NonRe...

MTP4N80E Data Sheet

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Part Number:
MTP4N80E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
800
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
800
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms)

VGS
VGSM

±20
±40


Vdc
Vpk

Drain - Continuous
- Continuous @ 100°C
- Single Pulse(tp10 s)
ID
ID
IDM
4.0
2.9
12

Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 8.0 Apk, L = 10 mH, RG = 25)
EAS
320
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
°C



Description

The MTP4N80E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, the MTP4N80E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies,converters and PWM motor controls, the MTP4N80E is particularly well suite for bridge circuits where diode speed and commutating afe operating areas are critical and offer additional safety margin gainst unexpected voltage transients. 
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature




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