MTP3N60E

Features:

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	600	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	600	Vdc
GatetoSource Voltage - Continuous - Nonrepetitive	VGS VGSM	± 20 ±40	Vdc Vpk
Drain Current - Continuous @ 100°C - Pulsed	ID ID IDM	3.0 2.4 14	Adc
Total Power Dissipation @ TC = 25°C Derate above 25°C	PD	75 0.6	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C

Description

The MTP3N60E is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. MTP3N60E is Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.