MTP3N50E Selling Leads, Price trend, MTP3N50E DataSheet download, circuit diagram from SeekIC.com

Specifications Parameter Symbol Value Unit DraintoSource Voltage VDSS 500 Vdc DraintoGate Voltage (RGS = 1.0 M) VDGR 500 Vdc GateSource Voltage - Continuous- Nonrepetitive(tp 50 s) VGSVGSM ±20±40 VdcVpk Drain Current - ContinuousDrain Curren...

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SeekIC No. : 004430828 Detail

MTP3N50E: Specifications Parameter Symbol Value Unit DraintoSource Voltage VDSS 500 Vdc DraintoGate Voltage (RGS = 1.0 M) VDGR 500 Vdc GateSource Voltage - Continuou...

MTP3N50E Data Sheet

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Part Number:: MTP3N50E
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/26

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Description

Specifications

Parameter	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	500	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	500	Vdc
GateSource Voltage - Continuous - Nonrepetitive(t_p 50 s)	V_GS V_GSM	±20 ±40	Vdc Vpk
Drain Current - Continuous Drain Current - Pulsed	I_D I_DM	3.0 10	Adc
Total Power Dissipation Derate above 25°C	P_D	50 0.4	Watts W/°C
Operating and Storage Temperature Range	T_J,T_stg	65 to 150	°C

Description

The MTP3N50E is designed to withstand high energy in the avalanche mode and switch efficiently.This MTP3N50E

also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode

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MTP3N50E

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