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MTP3N50

Features: • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode• SourcetoDrain Diode R...

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MTP3N50: Features: • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External...

MTP3N50 Data Sheet

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Part Number:
MTP3N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode




Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
500
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
500
Vdc
GatetoSource Voltage
- Continuous
- Nonrepetitive (tp 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
- Continuous
- Pulsed
ID
IDM
3.0
10
Adc

Total Power Dissipation TC = 25°C
Derate above 25°C
PD
50
0.4
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
60 to 150
°C



Description

The MTP3N50 is designed to withstand high energy in the avalanche mode and switch efficiently. This MTP3N50 also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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