Features: • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode• SourcetoDrain Diode Rec...
MTP3N120E: Features: • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External...
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Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
1200 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
1200 |
Vdc |
GatetoSource Voltage - Continuous - Nonrepetitive (tp 50 ms) |
VGS VGSM |
± 20 ±40 |
Vdc Vpk |
Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulsed (tp 10 s) |
ID ID IDM |
3.0 2.2 11 |
Adc Apk |
Total Power Dissipation Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
The MTP3N120E is designed to withstand high energy in the avalanche mode and switch efficiently. The MTP3N120E also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.