Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 32A
Input Capacitance (Ciss) @ Vds: 1700pF @ 25V
Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V
Power - Max: 90W
Manufacturer: ON Semiconductor
Features: New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
Specifications
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
60 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms) |
VGS
VGSM
|
±20
±25
|
|
Drain - Continuous
- Continuous @ 100°C
- Single Pulse(tp10 s) |
ID
ID
IDM |
32
22.6
112 |
|
Total Power Dissipation
Derate above 25°C |
PD |
90
0.6 |
Watts
W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
°C |
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL =32 Apk, L = 0.1 mH, RG = 25) |
EAS |
205 |
mJ |
Thermal Resistance - Junction to Case
- Junction to Ambient |
RJC
RJA |
1.67
62.5 |
°C/W |
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds |
TL |
260 |
°C |
MTP36N06V Data Sheet
