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MTP36N06

Features: • Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature• Static Parameters are the Same for both TMOS V and TMOS EFETSpecifications Rating Symbol Value Unit DraintoSource Voltage VDSS 60 Vdc DraintoGate Voltage (RG...

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MTP36N06: Features: • Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature• Static Parameters are the Same for both TMOS V and TMOS EFETSpecifications Rating...

MTP36N06 Data Sheet

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Part Number:
MTP36N06
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 25
Vdc
VPK
Drain Current
- Continuous @ 25°C
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
32
22.6
112
Adc

Apk
Total Power Dissipation 25°C
Derate above 25°C
PD
90
0.6
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS = 10Vdc, PEAK IL =32Apk, L =0.1mH, RG = 25)
EAS
205
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.67
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

MTP36N06 is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTP36N06 is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, the MTP36N06 is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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