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MTP33N10E

Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 100 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 100 Vdc GateSource Voltage- Continuous- NonRepetitive (tp10ms) VGSVGSM ±20±40 VdcVpk Drain - Continuous- Continuous @ 100°C- Single...

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SeekIC No. : 004430822 Detail

MTP33N10E: Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 100 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 100 Vdc GateSource Voltage- Continuous- NonRe...

MTP33N10E Data Sheet

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Part Number:
MTP33N10E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
100
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms)

VGS
VGSM

±20
±40


Vdc
Vpk

Drain - Continuous
- Continuous @ 100°C
- Single Pulse(tp10 s)
ID
ID
IDM
33
20
99

Adc

Apk

Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL =33 Apk, L = 1.0 mH, RG = 25)
EAS
545
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
RJC
RJA
1.00
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
°C



Description

Th MTP33N10E  is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP33N10E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature




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