MTP2P50E

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 6000 mOhms


Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	VGSS	500	Vdc
DrainGate Voltage (RGS = 1.0 M)	VDGR	500	Vdc
GateSource Voltage - Continuous - NonRepetitive (tp10ms)	VGS VGSM	±20 ±40	Vdc Vpk
Drain - Continuous - Continuous @ 100°C - Single Pulse(tp10 s)	ID ID IDM	2.0 1.6 6.0	Adc Apk
Total Power Dissipation Derate above 25°C	PD	75 0.6	Watts W/°C
Operating and Storage Temperature Range	TJ,Tstg	55 to 150	°C
Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL =4.0 Apk, L = 10 mH, RG = 25)	EAS	80	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	1.67 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds	TL	260	°C

Description

The MTP2P50E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies,converters and PWM motor controls, the MTP2P50E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature