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MTP29N15E

Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol Value Un...

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SeekIC No. : 004430808 Detail

MTP29N15E: Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDS...

MTP29N15E Data Sheet

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Part Number:
MTP29N15E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
150
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
150
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 400
Vdc
VPK
Drain Current
- Continuous
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
29
19
102
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =25 Vdc, VGS =10Vdc,PeakIL =29 Apk L =1.0mH, RG = 25
EAS
421
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.0
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.


Description

The MTP29N15E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP29N15E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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