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MTP27N10E

Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Device Marking: MTP27N10ESpecifications ...

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MTP27N10E: Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDS...

MTP27N10E Data Sheet

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Part Number:
MTP27N10E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Device Marking: MTP27N10E




Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS =1.0 M)
VDGR
100
Vdc
GatetoSource Voltage
- Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
VPK
Drain Current
- Continuous@ 25°C
- Continuous@ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
27
17
95
Adc

Apk
Total Power Dissipation @ 25°C
Derate above 25°C
PD
104
0.83
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =75 Vdc, VGS =10Vdc,PeakIL =27 Apk L =0.3mH, RG = 25
EAS
109
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
1.2
62.5
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

The MTP27N10E is designed to withstand high energy in the avalanche and commutation modes. The MTP27N10E also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP27N10E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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