MTP25N10E

This advanced MTP25N10E series of TMOS power MOSFETs is designed for withstand high energy in th avalanche and communication modes. These new energy efficient devices also offer drian-tosource diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP25N10E is paricularly well suited for bridge circuits where diode speed and communicating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.

MTP25N10E has some unique features: The first one is internal source-to-drain diode designed to replace external. The second one is communicating safe operating area(CSOA)specified for use in half and full bridge circuits. The third one is source to drain diode recovery time comparable to a discrete fast recovery didoe. The last one is diode is characterized for use in bridge circuits.There are some maximum ratings about it. Drain to source voltage (VDSS) is 100 Vdc. Drain to gate voltage(VDGR) is 100 vdc when RGS is 1 Mohm. Gate to source voltage(continous)(VGS) is ±20 Vdc. Drain current(continous)(ID) is 25 Adc or (IDM) is 120 Adc. Operating and storage temperature range are -65 to 175.

Well, this is a simple introduction to this type of MTP25N10E, if you want to know more about it, please pay more attention to our web. Thanks for your attention!