MTP20N20E Selling Leads, Price trend, MTP20N20E DataSheet download, circuit diagram from SeekIC.com

Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 200 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 200 Vdc GateSource Voltage- Continuous- NonRepetitive (tp10ms) VGSVGSM ±20±4 VdcVpk Drain - Continuous- Continuous @ 100°C- Single ...

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SeekIC No. : 004430803 Detail

MTP20N20E: Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 200 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 200 Vdc GateSource Voltage- Continuous- NonRe...

MTP20N20E Data Sheet

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Part Number:: MTP20N20E
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/26

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Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	V_GSS	200	Vdc
DrainGate Voltage (R_GS = 1.0 M)	V_DGR	200	Vdc
GateSource Voltage - Continuous - NonRepetitive (t_p10ms)	V_GS V_GSM	±20 ±4	Vdc Vpk
Drain - Continuous - Continuous @ 100°C - Single Pulse(t_p10 s)	I_D I_D I_DM	20 12 60	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	125 1.06	Watts W/°C
Operating and Storage Temperature Range	T_J,T_stg	55 to 150	°C
Single DraintoSource Avalanche Energy - Starting T_J = 25°C (V_DD = 25 Vdc, V_GS = 10 Vdc, I_L = 20 Apk, L = 3.0 mH, R_G = 25)	E_AS	600	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	1.00 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260	°C

Description

The MTP20N20E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTP20N20E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature

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