Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 150 V
Continuous Drain Current
: 20 A
Resistance Drain-Source RDS (on)
: 130 mOhms
Features: • Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications
|
Rating |
Symbol |
Value |
Unit |
|
DrainSource Voltage |
VDSS |
150 |
Vdc |
|
DrainGate Voltage (RGS = 1.0 MW) |
VDGR |
150 |
Vdc |
|
GateSource Voltage
Continuous
NonRepetitive (tp 10 ms) |
VGS
VGSM |
± 20
± 32 |
Vdc |
|
Drain Continuous
Continuous @ 100°C
Single Pulse (tp 10 ms) |
ID
ID
IDM |
20
12
60 |
Adc |
|
Total Power Dissipation
Derate above 25°C |
PD |
112
0.9 |
Watts
W/°C |
|
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
|
Single DraintoSource Avalanche Energy
Starting TJ = 25°C
(VDD = 120 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 0.3 mH) |
EAS |
60 |
mJ |
|
Thermal Resistance
Junction to Case
Junction to Ambient |
RqJC
RqJA |
1.1
62.5 |
°C/W |
|
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
DescriptionThe MTP20N15E is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters and PWM motor controls, the MTP20N15E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Parameters: | Technical/Catalog Information | MTP20N15E |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 1627pF @ 25V |
| Power - Max | 112W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 55.9nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MTP20N15E
MTP20N15E
|
MTP20N15E Data Sheet
