MTM867270LBF

MOSFET N-CH 20V 2.2A WSSMINI6

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MTM867270LBF: MOSFET N-CH 20V 2.2A WSSMINI6

floor Price/Ceiling Price

US $ .16~.47 / Piece | Get Latest Price
Part Number:
MTM867270LBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~5000
  • Unit Price
  • $.47
  • $.36
  • $.32
  • $.28
  • $.23
  • $.19
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 280pF @ 10V
Power - Max: 540mW Mounting Type: Surface Mount
Package / Case: WSSMini6-F1 Supplier Device Package: WSMini6-F1-B    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 2.2A
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Input Capacitance (Ciss) @ Vds: 280pF @ 10V
Power - Max: 540mW
Package / Case: WSSMini6-F1
Supplier Device Package: WSMini6-F1-B
Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V


Parameters:

Technical/Catalog InformationMTM867270LBF
VendorPanasonic - SSG (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.2A
Rds On (Max) @ Id, Vgs105 mOhm @ 1A, 4V
Input Capacitance (Ciss) @ Vds 280pF @ 10V
Power - Max540mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseWSSMini6-F1
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MTM867270LBF
MTM867270LBF
MTM867270LBFCT ND
MTM867270LBFCTND
MTM867270LBFCT



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