MTE30N50E

Features:

• 2500 V RMS Isolated ISOTOP Package
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• I_DSS and V_DS(on) Specified at Elevated Temperature
• U.L. Recognized, File #E69369


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	500	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	500	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	30 12 80	Adc Apk
Total Power Dissipation@ 25°C Derate above 25°C	PD	250 2.0	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100 Vdc, VGS = 10Vdc, PEAK IL =30Apk, L = 10mH, RG = 25)	EAS	300	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	0.5 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGSTHOMSON Microelectronics.


Description

The MTE30N50E is designed to withstand high energy in the avalanche mode and switch efficiently. The MTE30N50E also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.