MTE215N10E

Features:

• 2500 V RMS Isolated Isotop Package
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• I_DSS and V_DS(on) Specified at Elevated Temperature
• U. L. Recognized, File #E69369


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	100	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	100	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	215 136 860	Adc
Total Power Dissipation Derate above 25°C	PD	460 3.70	Watts W/°C
Operating and Storage Temperature Range	TJ, Tstg	40 to 150	°C
Single Pulse DraintoSource Avalanche Energy (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =215Apk, L = 0.017mH, RG = 25)	EAS	400	mJ
RMS Isolation Voltage	VISO	2500	Vac
Thermal Resistance - Junction to Case - Junction to Ambient	RJC RJA	0.28 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGSTHOMSON Microelectronics.


Description

The MTE215N10E is designed to withstand high energy in the avalanche mode and switch efficiently. The MTE215N10E also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.