Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on)Specified at Elevated Temperature• Surface Mount Package Available in 16 mm, 13in...
MTD6N20E: Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDS...
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Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
200 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
200 |
Vdc |
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
6.0 3.8 18 |
Adc Apk |
Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
50 0.4 1.75 |
Watts W/°C Watts |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 5 Apk, L = 10 mH, RG = 25) |
EAS |
180 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient when mounted to minimum recommended pad size |
RJC RJA RJA |
2.50 100 71.4 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |