Features: • Silicon Gate for Fast Switching Speeds• Low RDS(on) - 0.3 Max• Rugged - SOA is Power Dissipation Limited• SourcetoDrain Diode Characterized for Use WithInductive Loads• Low Drive Requirement - VGS(th) = 4.0 V Max• Surface Mount Package on 16 mm Tape...
MTD6N15: Features: • Silicon Gate for Fast Switching Speeds• Low RDS(on) - 0.3 Max• Rugged - SOA is Power Dissipation Limited• SourcetoDrain Diode Characterized for Use WithInductive...
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Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
150 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
150 |
Vdc |
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 50 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
Drain Current - Continuous - Pulsed |
ID IDM |
6.0 20 |
Adc |
Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
20 0.16 |
Watts W/°C |
Total Power Dissipation @ TA = 25°C Derate above 25°C |
PD |
1.25 0.01 |
Watts W/°C |
Total Power Dissipation @ TA = 25°C (1) Derate above 25°C |
PD |
1.75 0.014 |
Watts W/°C |
Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +150 |
°C |