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MTD6N15-1

Features: • Silicon Gate for Fast Switching Speeds• Low RDS(on) - 0.3 Max• Rugged - SOA is Power Dissipation Limited• Source−to−Drain Diode Characterized for Use With Inductive Loads• Low Drive Requirement - VGS(th) = 4.0 V Max• Surface Mount Packag...

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SeekIC No. : 004430578 Detail

MTD6N15-1: Features: • Silicon Gate for Fast Switching Speeds• Low RDS(on) - 0.3 Max• Rugged - SOA is Power Dissipation Limited• Source−to−Drain Diode Characterized for Use...

MTD6N15-1 Data Sheet

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Part Number:
MTD6N15-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Silicon Gate for Fast Switching Speeds
• Low RDS(on) - 0.3 Max
• Rugged - SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use With Inductive Loads
• Low Drive Requirement - VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
150
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
150
Vdc
GatetoSource Voltage - Continuous
GatetoSource Voltage - Nonrepetitive (tp 50 s)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Pulsed
ID
IDM
6.0
20
Adc


Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
Watts
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C(Note 1)
PD
1.25
0.01
Watts
W/°C
Total Power Dissipation @ TA = 25°C (1)
Derate above 25°C(Note 2)
PD
1.75
0.014
Watts
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150
°C



Description

The MTD6N15-1 is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.


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