MTD3N25E

Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	250	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	250	Vdc
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	3.0 2.0 9.0	Adc Apk
Total Power Dissipation Derate above 25°C Total Power Dissipation @ 25°C, when mounted to minimum recommended pad size	PD	40 0.32 1.75	Watts W/°C Watts
Operating and Storage Temperature Range	TJ, Tstg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10Vdc, PEAK IL =3.0Apk, L = 1.0mH, RG = 25)	EAS	45	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient, when mounted to minimum recommended pad size	RJC RJA RJA	3.13 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.


Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTD3N25E also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTD3N25E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.