MTD3055VT4

The MTD3055VT4 is one member of the MTD3055V series.This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, the MTD3055VT4 is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Features of the MTD3055VT4 are:(1)avalanche energy specified; (2)Idss and ds(on) specified at elevated temperature.At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified.

The absolute maximum ratings of the MTD3055VT4 can be summarized as:(1)drainsource voltage:60V;(2)storage temperature:-55 to 175;(3)operating temperature:-55 to 175;(4)draingate voltage:60V;(5)gatesource voltage:±20V.A Power MOSFET designated EFET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases nonlinearly with an increase of peak current in avalanche and peak junction temperature.