MTB33N10D

The MTB33N10D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R_DS(on) capabilities. This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTB33N10D also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.