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MTB29N15D

Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol Value Unit...

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MTB29N15D: Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDS...

MTB29N15D Data Sheet

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Part Number:
MTB29N15D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
150
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
150
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp  10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp  10 s)
ID
ID
IDM
29
19
102
Adc
Apk
Total Power Dissipation @ 25
Derate above 25
Total Power Dissipation @ TA = 25 (1)
PD
125
1.0
2.5
Watts
W/
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL =29 Apk, L = 1.0 mH, RG = 25 )
EAS
421
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient (1)
RJC
RJA
RJA
1.0
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.




Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTB29N15D also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, MTB29N15D is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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