MT9F001I12STCV

The MT9F001I12STCV is designed as one kind of auto-select boot-block flash memory that can be electrically block-erased and reprogrammed. And this MT9F001I12STCV can be ordered in five different voltage configurations and is offered in a 256K-byte organization only. Features of this MT9F001I12STCV are:(1)all inputs/outputs TTL-compatible; (2)five different combinations of supply voltages offered; (3)write-protection for boot block; (4)industry standard command-state machine (CSM): erase suspend/resume and algorithm-selection identifier; (5)write-protection for boot block; (6)fully automated on-chip erase and word / byte program operations; (7)100000- and 10000-program/erase-cycle versions; (8)'28F200Axy offers a user-defined 8-bit (byte) or 16-bit (word) organization.

The absolute maximum ratings of the MT9F001I12STCV can be summarized as:(1)Supply voltage range, Vcc: -0.6 V to 7 V;(2)Supply voltage range, Vpp: -0.6 V to 14 V;(3)Input voltage range - all inputs except A9, RP: -0.6 V to Vcc + 1 V;(4)Input voltage range RP, A9: -0.6 V to 13.5 V;(5)Output voltage range: -0.6 V to Vcc + 1 V;(6)Storage temperature range: -65°C to 150°C.

The electrical characteristics of this MT9F001I12STCV can be summarized as:(1)Low-level dc output voltage: 0.45 V;(2)A9 selection code voltage: 11.4 to 12.6 V;(3)A9 selection code current: 500 uA;(4)RP boot-block unlock current: 500 uA;(5)Output current (leakage): ±10 uA. If you want to know more information such as the electrical characteristics about MT9F001I12STCV, please download the datasheet in www.seekic.com or www.chinaicmart.com.