MT8LSDT3264A(I)

The MT8LSDT3264A(I) are high-speed CMOS, dynamic random-access, 256MB and 512MB memory modules organized in x64 configurations. These modules MT8LSDT3264A(I) use internally configured quad-bank SDRAMS with a synchronous interface (all signals are registered on the positive edge of the clock signals CK0-CK3).

Read and write accesses to the SDRAM modules MT8LSDT3264A(I) are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits of MT8LSDT3264A(I) registered coincident with the ACTIVE command are used to select the device bank and row to be accessed (BA0, BA1 select the device bank; A0A12 select the device row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.

The modules MT8LSDT3264A(I) provide for programmable READ or WRITE burst length of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An AUTO PRECHARGE function may be enabled to provide a selftimed row precharge that is initiateda the end of the burst sequence.

The modules MT8LSDT3264A(I) use an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one device bank while accessing one of the other three device banks will hide the precharge cycles and provide seamless, high-speed, random- access operation.

The modules MT8LSDT3264A(I) are designed to operate in 3.3V, lowpower memory systems. An auto refresh mode is provided, along with a power-saving, power-down mode. All inputs and outputs are LVTTL-compatible.

SDRAM modules MT8LSDT3264A(I) offer substantial advances in DRAM operating performance, including the ability to syncronously burst data at a high data rate with automatic column-address generation, the ability to interleave between intenal banks in order to hide precharge time and the capability to randomly change column addresses on each clock cycle during a burst access. For more information regarding SDRAM operation, refer to the 256Mb SDRAM component data sheet.