ApplicationThis specification is applied to IGBT Module named 2MBI1200U4G-120 .Specifications Items Symbols Conditions MaximumRatings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25 1600 A Tc=80 ...
MT5F16507: ApplicationThis specification is applied to IGBT Module named 2MBI1200U4G-120 .Specifications Items Symbols Conditions MaximumRatings Units Collector-Emitter voltage VCES 1200 V ...
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Items | Symbols | Conditions | Maximum Ratings |
Units | ||
Collector-Emitter voltage | VCES | 1200 | V | |||
Gate-Emitter voltage | VGES | ±20 | V | |||
Collector current | Ic | Continuous | Tc=25 | 1600 | A | |
Tc=80 | 1200 | |||||
Icp | 1ms | Tc=25 | 3200 | |||
Tc=80 | 2400 | |||||
-Ic | 1200 | |||||
-Ic pulse | 1ms | 2400 | ||||
Collector Power Dissipation | Pc | 1 device | 4960 | W | ||
Junction temperature | Tj | 150 | ||||
Storage temperature | Tstg | -40 ~ +125 | ||||
Isolation voltage |
between terminal and copper base *1 | Viso | AC : 1min. | 2500 | VAC | |
Screw Torque *2 | Mounting | 5.75 | N m | |||
Main Terminals | 10 | |||||
Sense Terminals | 2.5 |