Features: • PC100- and PC133-compliant
• Fully synchronous; all signals registered on positive edge of system clock
• Internal pipelined operation; column address can be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, includes CONCURRENT AUTO PRECHARGE, and Auto Refresh Modes
• Self Refresh Mode
• 64ms, 8,192-cycle refresh
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supplyPinout
SpecificationsVoltage on VDD, VDDQ Supply
Relative to VSS ....................................... -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS ....................................... -1V to +4.6V
Operating Temperature,
TA (Commercial) ..................................0°C to +70°C
Storage Temperature (plastic) ...... -55°C to +150°C
Power Dissipation ................................................. 1WDescriptionThe 512Mb SDRAM MT48LC128M4A2 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a syn- chronous interface (all signals are registered on the posi- tive edge of the clock signal, CLK). Each of the x4's 134,217,728-bit banks of MT48LC128M4A2 is organized as 8,192 rows by 4,096 columns by 4 bits. Each of the x8's 134,217,728-bit banks is organized as 8,192 rows by 2,048 columns by 8 bits. Each of the x16's 134,217,728-bit banks is organized as 8,192 rows by 1,024 columns by 16 bits.
Read and write accesses to the SDRAM MT48LC128M4A2 are burst ori-ented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an AC-TIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A12 select the row). The address bits of MT48LC128M4A2 registered coincident with the READ orWRITE command are used to select the starting column location for the burst access.
MT48LC128M4A2 Data Sheet
