MT28F200B3

The MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V V_PP voltage, while all operations are performed with a 3.3V V_CC. Due to process technology advances, 5V V_{PP of MT28F200B3} is optimal for application and production programming. For backward compatibility with SmartVoltage technology, 12V V_PP is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours. These MT28F200B3 are fabricated with Micron's advanced CMOS floating-gate process.

The MT28F002B3 and MT28F200B3 are organized into five separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block of MT28F200B3 requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block of MT28F200B3 may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.