Features: • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks• VCC, VCCQ and VPP voltages: 3.3V ±5% VCC 3.3V ±5% VCCQ 1.65V3.465V and 12V VPP• Address access times: 90ns at 3.3V ±5%• Low power consumption: Standby and deep power...
MT28F160C34: Features: • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks• VCC, VCCQ and VPP voltages: 3.3V ±5% VCC 3.3V ±5% VCCQ 1.65V3.465V and 12V VP...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
The MT28F160C34 is a nonvolatile, electrically blockerasable (flash), programmable memory containing 16,777,216 bits organized as 1,048,576 words (16 bits).
The MT28F160C34 is manufactured on 0.22m process technology in a 46-ball FBGA package.
The embedded WORD WRITE and BLOCK ERASE functions of MT28F160C34 are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves the system processor of secondary tasks. The WSM status can be monitored by an on-chip status register to determine the progress of program/erase tasks.
The MT28F160C34 is equipped with 128 bits of one time programmable (OTP) area. The soft protection feature for blocks will mark them as read-only by configuring soft protection registers with command sequences.