Features: • Thirty-nine erase blocks:Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks• VCC, VCCQ and VPP voltages: 2.7V3.3V VCC 2.7V3.3V VCCQ* 1.65V3.3V and 12V VPP• Address access times: 90ns, 110ns at 2.7V3.3V• Low power consumption: Standby and deep ...
MT28F160C3: Features: • Thirty-nine erase blocks:Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks• VCC, VCCQ and VPP voltages: 2.7V3.3V VCC 2.7V3.3V VCCQ* 1.65V3.3V and 12V VPP&...
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Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits).
The MT28F160C3 is manufactured on 0.22m process technology in a 48-ball FBGA package. The device has an I/O supply of 2.7V (MIN). Programming in production is accomplished by using high voltage which can be supplied on a separate line.
The embedded WORD WRITE and BLOCK ERASE functions of MT28F160C3 are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves the system processor of secondary tasks. The WSM status can be monitored by an on-chip status register to determine the progress of program/erase tasks.
The MT28F160C3 is equipped with 128 bits of one time programmable (OTP) area. The soft protection of MT28F160C3 feature for blocks will mark them as read-only by configuring soft protection registers with command sequences.