Features: • Thirty-nine erase blocks:Two 4K-word boot blocks (protected)Six 4K-word parameter blocksThirty-one 32K-word main memory blocks• VCC, VCCQ and VPP voltages:2.7V3.3V VCC and VPP 2.7V3.3V VCCQ* 5V VPP fast programming voltage• Address access times: 90ns, 110ns at 2.7V3.3...
MT28F160A3: Features: • Thirty-nine erase blocks:Two 4K-word boot blocks (protected)Six 4K-word parameter blocksThirty-one 32K-word main memory blocks• VCC, VCCQ and VPP voltages:2.7V3.3V VCC and VP...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
The MT28F160A3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits).
The MT28F160A3 is manufactured on 0.22m process technology in a 48-ball FBGA package. The device has an I/O supply of 2.7V (MIN). Programming in production is accomplished by using high voltage which can be supplied on a separate line.
The embedded WORD WRITE and BLOCK ERASE functions of MT28F160A3 are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves the system processor of secondary tasks. The WSM status of MT28F160A3 can be monitored by an on-chip status register to determine the progress of program/erase tasks.