MT28F160A3

Features: • Thirty-nine erase blocks:Two 4K-word boot blocks (protected)Six 4K-word parameter blocksThirty-one 32K-word main memory blocks• VCC, VCCQ and VPP voltages:2.7V3.3V VCC and VPP 2.7V3.3V VCCQ* 5V VPP fast programming voltage• Address access times: 90ns, 110ns at 2.7V3.3...

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MT28F160A3 Picture
SeekIC No. : 004429681 Detail

MT28F160A3: Features: • Thirty-nine erase blocks:Two 4K-word boot blocks (protected)Six 4K-word parameter blocksThirty-one 32K-word main memory blocks• VCC, VCCQ and VPP voltages:2.7V3.3V VCC and VP...

floor Price/Ceiling Price

Part Number:
MT28F160A3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Thirty-nine erase blocks:
      Two 4K-word boot blocks (protected)
      Six 4K-word parameter blocks
      Thirty-one 32K-word main memory blocks
• VCC, VCCQ and VPP voltages:
      2.7V3.3V VCC and VPP
      2.7V3.3V VCCQ*
      5V VPP fast programming voltage
• Address access times:
      90ns, 110ns at 2.7V3.3V
• Low power consumption:
     Standby and deep power-down mode < 1A
     (typical ICC)
     Automatic power saving feature (APS mode)
• Enhanced WRITE/ERASE SUSPEND (1s typical)
• Industry-standard command set compatibility
• Hardware block protection



Specifications

Supply Voltage Range, VCC ...................... -0.6V to +4.0V3
Supply Voltage Range, VPP ....................... -0.6V to +6.0V3
Input Voltage Range .................................. -0.6V to +4.0V
Output Voltage Range .............................. -0.6V to +4.0V4
Storage Temperature Range, TSTG ........... -65 to +150



Description

The MT28F160A3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits).

The MT28F160A3 is manufactured on 0.22m process technology in a 48-ball FBGA package. The device has an I/O supply of 2.7V (MIN). Programming in production is accomplished by using high voltage which can be supplied on a separate line.

The embedded WORD WRITE and BLOCK ERASE functions of MT28F160A3 are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves the system processor of secondary tasks. The WSM status of MT28F160A3  can be monitored by an on-chip status register to determine the progress of program/erase tasks.




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