Features: • Thirty-two 64KB erase blocks• Deep Power-Down Mode: 10A MAX• Smart 5 technology: 5V ±10% VCC5V ±10% VPP application/production programming 12V VPP tolerant compatibility production programming• Address access time: 90ns• Industry-standard pinouts• In...
MT28F016S5: Features: • Thirty-two 64KB erase blocks• Deep Power-Down Mode: 10A MAX• Smart 5 technology: 5V ±10% VCC5V ±10% VPP application/production programming 12V VPP tolerant compatibilit...
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Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
The MT28F016S5 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 2,097,152 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. For backward compatibility with SmartVoltage technology, 12V VPP of MT28F016S5 is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours. The device is fabricated with Micron's advanced CMOS floatinggate process.
The MT28F016S5 is organized into 32 separately erasable blocks. ERASEs may be interrupted to allow other operations with the ERASE SUSPEND command. After the ERASE SUSPEND command is issued, READ operations may be executed.
Operations are executed with commands from an industry-standard command set. In addition to status register polling, the MT28F016S5 provides a ready/ busy# (RY/BY#) output to indicate WRITE and ERASE completion.