MT28F004B5VG-8B

MT28F004B5VG-8B is a kind of nonvolatile, electrically block-erasable (Flash), programmable read-only memory. It contains 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). MT28F004B5VG-8B is organized into seven separately erasable blocks.

There are some features of MT28F004B5VG-8B as follows. (1) seven erase blocks; (2) smart 5 technology (B5); (3) advanced 0.18m CMOS floating-gate process; (4) compatible with 0.3m smart 5 device; (5) address access time: 80 ns; (6) 100,000 ERASE cycles; (7) industry-standard pinouts; (8) automated write and erase algorithm; (9) two-cycle WRITE/ERASE sequence; (8) TSOP and SOP packaging options; (9) byte- or word-wide READ and WRITE (512K*8); (10) inputs and outputs are fully TTL-compatible.

The following is about the absolute maximum ratings of MT28F004B5VG-8B. (1): voltage on VCC supply relative to VSS is from -0.5 to +6 V; (2): input voltage relative to VSS is from -0.5 to +6 V; (3): VPP voltage relative to VSS is from -0.5 to +5.5 V; (4): RP# or A9 pin voltage relative to Vss is from -0.5 to +12.6 V; (5): power dissipation is 1 W; (6): temperature under bias is from -40 to +85; (7) storage temperature (plastic) is from -55 to +125.