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MT28F004B5

Features: • Seven erase blocks:16KB/8K-word boot block (protected)Two 8KB/4K-word parameter blocksFour main memory blocks• Smart 5 technology (B5):5V ±10% VCC5V ±10% VPP application/productionprogramming12V ±5% VPP compatibility productionprogramming• Address access times: 60ns, ...

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SeekIC No. : 004429676 Detail

MT28F004B5: Features: • Seven erase blocks:16KB/8K-word boot block (protected)Two 8KB/4K-word parameter blocksFour main memory blocks• Smart 5 technology (B5):5V ±10% VCC5V ±10% VPP application/prod...

MT28F004B5 Data Sheet

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Part Number:
MT28F004B5
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
• Smart 5 technology (B5):
5V ±10% VCC
5V ±10% VPP application/production
programming
12V ±5% VPP compatibility production
programming
• Address access times: 60ns, 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
(MT28F400B5, 256K x 16/512K x 8)
• Byte-wide READ and WRITE only
(MT28F004B5, 512K x 8)
• TSOP and SOP packaging options




Pinout

Connection Diagram Connection Diagram




Specifications

Voltage on VCC Supply
Relative to VSS ....................................-0.5V to +6V**
Input Voltage Relative to VSS ..............-0.5V to +6V**
VPP Voltage Relative to VSS ..............-0.5V to +12.6V†
RP# or A9 Pin Voltage
Relative to VSS ................................. -0.5V to +12.6V†
Temperature Under Bias ...................-40°C to +85°C
Storage Temperature (plastic) ........-55°C to +125°C
Power Dissipation ...................................................1W




Description

The MT28F004B5 are highperformance, high-density, nonvolatile memory solutions that can significantly improve system performance. This new architecture features a twomemory- bank configuration that supports dual-bank operation with no latency.

A high-performance bus interface of MT28F004B5 allows a fast burst or page mode data transfer; a conventional asynchronous bus interface is provided as well.

The MT28F004B5 allow soft protection for blocks, as readonly, by configuring soft protection registers with dedicated command sequences. For security purposes, two 64-bit chip protection registers are provided.

The embedded WORD WRITE and BLOCK ERASE functions of MT28F004B5 are fully automated by an on-chip write state machine (WSM). Two on-chip status registers, one for each of the two memory partitions, can be used to monitor the WSM status and to determine the progress of the program/erase task.

The erase/program suspend functionality of MT28F004B5 allows compatibility with existing EEPROM emulation software packages.

These MT28F004B5 are manufactured using 0.18m process technology.




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