MT28F002B3

Features: • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks• Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming 12V ±5% VPP compatibility production...

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SeekIC No. : 004429674 Detail

MT28F002B3: Features: • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks• Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP applica...

floor Price/Ceiling Price

Part Number:
MT28F002B3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Five erase blocks:
    16KB/8K-word boot block (protected)
    Two 8KB/4K-word parameter blocks
    Two main memory blocks
• Smart 3 technology (B3):
    3.3V ±0.3V VCC
    3.3V ±0.3V VPP application programming
    5V ±10% VPP application/production
    programming
    12V ±5% VPP compatibility production
    programming
• Address access times: 90ns, 100ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
    (MT28F200B3, 128K x 16/256K x 8)
• Byte-wide READ and WRITE only
    (MT28F002B3, 256K x 8)
• TSOP and SOP packaging options



Pinout

'  Connection Diagram


Specifications

Voltage on VCC Supply
Relative to VSS ................................ -0.5V to +6V**
Input Voltage Relative to VSS ......... -0.5V to +6V**
VPP Voltage Relative to VSS .......... -0.5V to +12.6V†
RP# or A9 Pin Voltage
Relative to VSS .............................. -0.5V to +12.6V†
Temperature Under Bias .............. -40°C to +85°C
Storage Temperature (plastic) ... -55°C to +125°C
Power Dissipation .............................................. 1W



Description

The MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the MT28F002B3 is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. For backward compatibility with SmartVoltage technology, 12V VPP is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours. These MT28F002B3 are fabricated with Micron's advanced CMOS floating-gate process.

The MT28F002B3 and MT28F200B3 are organized into five separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks of MT28F002B3 vary in density and are written and erased with no additional security measures.




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