Features: • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks• Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming 12V ±5% VPP compatibility production...
MT28F002B3: Features: • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks• Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP applica...
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Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
The MT28F002B3 (x8) and MT28F200B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 bits organized as 131,072 words (16 bits) or 262,144 bytes (8 bits). Writing or erasing the MT28F002B3 is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. For backward compatibility with SmartVoltage technology, 12V VPP is supported for a maximum of 100 cycles and may be connected for up to 100 cumulative hours. These MT28F002B3 are fabricated with Micron's advanced CMOS floating-gate process.
The MT28F002B3 and MT28F200B3 are organized into five separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks of MT28F002B3 vary in density and are written and erased with no additional security measures.