Features: • Flexible dual-bank architecture• Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa• Organization: 2,048K x 16 (Flash) 128K x 16 (SRAM)• Basic configuration: Fla...
MT28C3212P2NFL: Features: • Flexible dual-bank architecture• Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and ...
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Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
• Flexible dual-bank architecture
• Support for true concurrent operations with no
latency:
Read bank b during program bank a and vice versa
Read bank b during erase bank a and vice versa
• Organization: 2,048K x 16 (Flash)
128K x 16 (SRAM)
• Basic configuration:
Flash
Bank a (4Mb Flash for data storage)
Eight 4K-word parameter blocks
Seven 32K-word blocks
Bank b (28Mb Flash for program storage)
Fifty-six 32K-word main blocks
SRAM
2Mb SRAM for data storage
128K-words
• F_VCC, VCCQ, F_VPP, S_VCC voltages1
1.65V (MIN)/1.95V (MAX) F_VCC read voltage or
1.80V (MIN)/2.20V (MAX) F_VCC read voltage
1.65V (MIN)/1.95V (MAX) S_VCC read voltage or
1.80V (MIN)/2.20V (MAX) S_VCC read voltage
1.65V (MIN)/1.95V (MAX) VCCQ or
1.80V (MIN)/2.20V (MAX) VCCQ
1.80V (TYP) F_VPP (in-system PROGRAM/ERASE)
0.0V (MIN)/2.20V (MAX) F_VPP (in-system
PROGRAM/ERASE)2
12V ±5% (HV) F_VPP (production programming
compatibility)
• Asynchronous access time1
Flash access time: 100ns or 110ns @ 1.65V F_VCC
SRAM access time: 100ns @ 1.65V S_VCC
• Page Mode read access1
Interpage read access: 100ns/110ns @ 1.65V F_VCC
Intrapage read access: 35ns/45ns @ 1.65V F_VCC
• Low power consumption
• Enhanced suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
• Read/Write SRAM during program/erase of Flash
• Dual 64-bit chip protection registers for security
purposes
• PROGRAM/ERASE cycles
100,000 WRITE/ERASE cycles per block
• Cross-compatible command set support
Extended command set
Common Flash interface (CFI) compliant
The MT28C3212P2FL and MT28C3212P2NFL combination Flash and SRAM memory devices provide a compact, low-power solution for systems where PCB real estate is at a premium. The dual-bank Flash is a high performance, high-density, nonvolatile memory device with a revolutionary architecture that can significantly improve system performance.
This new architecture of MT28C3212P2NFL features:
• A two-memory-bank configuration supporting
dual-bank burst operation;
• A high-performance bus interface providing a fast
page data transfer; and
• A conventional asynchronous bus interface.
The MT28C3212P2NFL also provides soft protection for blocks by configuring soft protection registers with dedicated command sequences. For security purposes, dual 64- bit chip protection registers are provided.
The embedded WORD WRITE and BLOCK ERASE functions of MT28C3212P2NFL are fully automated by an on-chip write state machine (WSM). The WSM simplifies these operations and relieves the system processor of secondary tasks. An on-chip status register of MT28C3212P2NFL, one for each bank, can be used to monitor the WSM status to determine the progress of a PROGRAM/ERASE command.
The erase/program suspend functionality of MT28C3212P2NFL allows compatibility with existing EEPROM emulation software packages.
The MT28C3212P2NFL takes advantage of a dedicated power source for the Flash device (F_VCC) and a dedicated power source for the SRAM device (S_VCC), both at 1.65V1.95V or 1.80V2.20V for optimized power consumption and improved noise immunity. The MT28C3212P2FL and MT28C3212P2NFL devices support two VPP voltage ranges, VPP1 and VPP2. VPP1 is an incircuit voltage of 0.9V2.2V (MT28C3212P2FL) or 0.0V 2.2V (MT28C3212P2NFL). VPP2 is the production compatibility voltage of 12V ±5%. The 12V ±5% VPP2 is supported for a maximum of 100 cycles and 10 cumulative hours. See Table 1.
The MT28C3212P2FL and MT28C3212P2NFL devices contain an asynchronous 2Mb SRAM organized as 128K-words by 16 bits. These devices are fabricated using an advanced CMOS process and high-speed/ ultra-low-power circuit technology.
The MT28C3212P2FL and MT28C3212P2NFL devices are packaged in a 66-ball FBGA package with 0.80mm pitch.