MT28C3212P2NFL

Features: • Flexible dual-bank architecture• Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa• Organization: 2,048K x 16 (Flash) 128K x 16 (SRAM)• Basic configuration: Fla...

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SeekIC No. : 004429667 Detail

MT28C3212P2NFL: Features: • Flexible dual-bank architecture• Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and ...

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Part Number:
MT28C3212P2NFL
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

• Flexible dual-bank architecture
• Support for true concurrent operations with no
   latency:
    Read bank b during program bank a and vice versa
    Read bank b during erase bank a and vice versa
• Organization: 2,048K x 16 (Flash)
    128K x 16 (SRAM)
• Basic configuration:
   Flash
    Bank a (4Mb Flash for data storage)
    Eight 4K-word parameter blocks
    Seven 32K-word blocks
   Bank b (28Mb Flash for program storage)
    Fifty-six 32K-word main blocks
   SRAM
   2Mb SRAM for data storage
    128K-words
• F_VCC, VCCQ, F_VPP, S_VCC voltages1
   1.65V (MIN)/1.95V (MAX) F_VCC read voltage or
    1.80V (MIN)/2.20V (MAX) F_VCC read voltage
   1.65V (MIN)/1.95V (MAX) S_VCC read voltage or
    1.80V (MIN)/2.20V (MAX) S_VCC read voltage
   1.65V (MIN)/1.95V (MAX) VCCQ or
    1.80V (MIN)/2.20V (MAX) VCCQ
   1.80V (TYP) F_VPP (in-system PROGRAM/ERASE)
   0.0V (MIN)/2.20V (MAX) F_VPP (in-system
    PROGRAM/ERASE)2
   12V ±5% (HV) F_VPP (production programming
    compatibility)
• Asynchronous access time1
   Flash access time: 100ns or 110ns @ 1.65V F_VCC
   SRAM access time: 100ns @ 1.65V S_VCC
• Page Mode read access1
   Interpage read access: 100ns/110ns @ 1.65V F_VCC
   Intrapage read access: 35ns/45ns @ 1.65V F_VCC
• Low power consumption
• Enhanced suspend options
   ERASE-SUSPEND-to-READ within same bank
   PROGRAM-SUSPEND-to-READ within same bank
   ERASE-SUSPEND-to-PROGRAM within same bank
• Read/Write SRAM during program/erase of Flash
• Dual 64-bit chip protection registers for security
   purposes
• PROGRAM/ERASE cycles
   100,000 WRITE/ERASE cycles per block

• Cross-compatible command set support
   Extended command set
   Common Flash interface (CFI) compliant




Specifications

Voltage to Any Pin Except VCC and VPP
with Respect to VSS ............................ -0.5V to +2.45V
VPP Voltage (for BLOCK ERASE and PROGRAM
with Respect to VSS) ....................... -0.5V to +13.5V**
VCC and VCCQ Supply Voltage
with Respect to VSS ............................ -0.3V to +2.45V
Output Short Circuit Current.............................. 100mA
Operating Temperature Range .............. -40 to +85
Storage Temperature Range ............... -55 to +125
Soldering Cycle ....................................... 260 for 10s



Description

The MT28C3212P2FL and MT28C3212P2NFL combination Flash and SRAM memory devices provide a compact, low-power solution for systems where PCB real estate is at a premium. The dual-bank Flash is a high performance, high-density, nonvolatile memory device with a revolutionary architecture that can significantly improve system performance.

This new architecture of MT28C3212P2NFL features:

• A two-memory-bank configuration supporting
   dual-bank burst operation;

• A high-performance bus interface providing a fast
   page data transfer; and

• A conventional asynchronous bus interface.

The MT28C3212P2NFL also provides soft protection for blocks by configuring soft protection registers with dedicated command sequences. For security purposes, dual 64- bit chip protection registers are provided.

The embedded WORD WRITE and BLOCK ERASE functions of MT28C3212P2NFL are fully automated by an on-chip write state machine (WSM). The WSM simplifies these operations and relieves the system processor of secondary tasks. An on-chip status register of MT28C3212P2NFL, one for each bank, can be used to monitor the WSM status to determine the progress of a PROGRAM/ERASE command.

The erase/program suspend functionality of MT28C3212P2NFL allows compatibility with existing EEPROM emulation software packages.

The MT28C3212P2NFL takes advantage of a dedicated power source for the Flash device (F_VCC) and a dedicated power source for the SRAM device (S_VCC), both at 1.65V1.95V or 1.80V2.20V for optimized power consumption and improved noise immunity. The MT28C3212P2FL and MT28C3212P2NFL devices support two VPP voltage ranges, VPP1 and VPP2. VPP1 is an incircuit voltage of 0.9V2.2V (MT28C3212P2FL) or 0.0V 2.2V (MT28C3212P2NFL). VPP2 is the production compatibility voltage of 12V ±5%. The 12V ±5% VPP2 is supported for a maximum of 100 cycles and 10 cumulative hours. See Table 1.

The MT28C3212P2FL and MT28C3212P2NFL devices contain an asynchronous 2Mb SRAM organized as 128K-words by 16 bits. These devices are fabricated using an advanced CMOS process and high-speed/ ultra-low-power circuit technology.

The MT28C3212P2FL and MT28C3212P2NFL devices are packaged in a 66-ball FBGA package with 0.80mm pitch.




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