MSS50

Features:

Symbol	Value	Unit
IT(RMS) VDRM/VRRM IGT	55 and 70 800 and 1200 50	A V mA

Specifications

Symbol	Parameter			Value		Unit
IT(RMS)	RMS on-state current	Tc = 80 °C		MSS40	MSS50	A
		Tc = 85 °C		55
ITSM	Non repetitive surge peak on-state current	tp = 16.7 ms	Tj = 25°C		70
		tp = 20 ms		420	630	A
I²t	I²t Value for fusing	tp = 10 ms	Tj = 25°C	800	1800	A2S
dI/dt	Critical rate of rise of on-state current IG = 2 x IGT , tr × 100 ns	F = 120 Hz	Tj = 125°C	50		A/µs
IGM	Peak gate current	tp = 20 µs	Tj = 125°C	4		A
PG(AV)	Average gate power dissipation		Tj = 125°C	1		W
Tstg Tj	Storage junction temperature range Operating junction temperature range			- 40 to + 150 - 40 to + 125		°C
VRGM	Maximum peak reverse gate voltage			5		V

Description

Packaged in ISOTOP modules, the MSS40 /MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity. They are suitable for high power applications such as solid state relays, heating control syste-ms, welding equipment, motor control circuits...

The compactness of the ISOTOP package of MSS50 allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734).