MSM81C55-5GS

Features:

• High speed and low power achieved with silicon gate CMOS technology
• 256 words x 8bits RAM
• Single power supply, 3 to 6 V
• Completely static operation
• On-chip address latch
• 8-bit programmable I/O ports (port A and B)
• TTL Compatible
• RAM data hold characteristic at 2 V
• 6-bit programmable I/O port (port C)
• 14-bit programmable binary counter/timer
• Multiplexed address/data bus
• Direct interface with MSM80C85AH
• 40-pin Plastic DIP (DIP40-P-600-2.54): (Product name: MSM81C55-5RS)
• 44-pin Plastic QFJ (QFJ44-P-S650-1.27): (Product name: MSM81C55-5JS)
• 44-pin Plastic QFP (QFP44-P-910-0.80-2K): (Product name: MSM81C55-5GS-2K)


Pinout

Specifications

Parameter	Symbol	Condition	Rating				Unit
			MSM81C55-5RS	MSM81C55-5GS	MSM81C55-5JS
Power Supply Voltage	VCC	With respect to GND	0.5 to +7.0				V
Input Voltage	VIN		0.5 to VCC +0.5				V
Output Voltage	VOUT		0.5 to VCC +0.5				V
Storage Temperature	TSTG	-	55 to +150				°C
Power Dissipation	PD	Ta = 25°C	1.0		0.7	1.0	W

Description

The MSM81C55-5GS has a 2k-bit static RAM (256 bytes) with parallel I/O ports and a timer. It uses silicon gate CMOS technology and consumes a standby current of 100 micro ampere, maximum, while the chip is not selected. Feat-ureing a maximum access time of 400 ns, the MSM81C55-5 can be used in an MSM80C85AH system without using wait states. The parallel I/O of MSM81C55-5GS consists of two 8-bit ports and one 6-bit port (both general purpose).

The MSM81C55-5GS also contains a 14-bit programmable counter/timer which may be used for sequence-wave gen-eration or terminal count-pulsing.