Features: • Lower power consumption enabled by CMOS silicon gate process• Completely static operation• Improved power-down feature• Instruction cycle : 1.36 s (11 MHz) VCC=4.5 to 6.0 V (MSM80C48/49) 2.5 s (6 MHz) VCC=3.5 to 6.0 V (MSM80C50)• 111 instructions• Al...
MSM80C35: Features: • Lower power consumption enabled by CMOS silicon gate process• Completely static operation• Improved power-down feature• Instruction cycle : 1.36 s (11 MHz) VCC=4....
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Parameter |
Symbol |
Condition |
Rating |
Unit |
Power Supply Voltage |
VDD |
Ta = 25°C |
0.5 to 7 |
V |
Input Voltage |
VIN |
Ta = 25°C |
0.3 to VCC +0.5 |
V |
Storage Temperature |
TSTG |
Ta = 25°C |
65 to +150 |
°C |