MSK 3020

V_DSS Drain to Source Voltage .......................................100V MAX
V_DGDR Drain to Gate Voltage (RGS = 1 Mw ) ..................100V MAX
VGS Gate to Source Voltage (Continuous) .................±20V MAX
I_D Continuous Current ............................................. 10A MAX
I_DM Pulsed Current .....................................................25A MAX
R_TH-JC Thermal Resistance(Junction to Case) ..................4.0°C/W
I_M Sense Current - Continuous ....................................13 mA
MAX
I_MM Sense Current Peak ................................................ 33 mA
Single Pulse Avalanche Energy
(Q1, Q4) ..................................................................7.9 mJ
(Q2, Q3) ...................................................................69 mJ
T_J Junction Temperature ....................................+175°C MAX
T_ST Storage Temperature ............................. -55°C to+150 °C
T_CCase Operating Temperature Range .... -55°C to+ 125 °C
T_LD Lead Temperature Range(10 Seconds) ............300°C MAX

The MSK 3020 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.
The MSK 3020 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The N Channel MOSFETS are current sensing to allow lossless current sensing for current controlled applications. The MSK 3020 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems.
The MSK 3020 is pin compatible with the MPM3002 and MPM3012 with some differences in specifications.