MSK 3017

V_DSS Drain to Source Voltage.................200V MAX
V_DGDR Drain to Gate Voltage
(RGS=1MW).......................200V MAX
V_GS Gate to Source Voltage
(Continuous)........................±20V MAX
I_DContinuous Current......................30A MAX
I_DM Pulsed Current.......................46A MAX
R_TH-JC Thermal Resistance
(Junction to Case)@25°C.................1.0°C/W
R_TH-JC Thermal Resistance
(Junction to Case)@125°C.................1.6°C/W
Single Pulse Avalanche Energy................1000 mJ
T_J Junction Temperature..................+150°C MAX
T_ST Storage Temperature..............-55°C to +150°C
T_C Case Operating Temperature Range.......-55°C to +125°C
T_LD Case Operating Temperature Range
(10 Seconds).......................300°C MAX

The MSK 3017 is an all N-Channel three phase power MOSFET Bridge Circuit. Packaged in a space efficient isolated ceramic tab power SIP that allows for direct heat sinking, the MSK 3017 can be interfaced with a wide array of brushless motor drive IC's. The MSK 3017 uses M.S Kennedy's proven power hybrid technology to produce a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems.