Transistors Bipolar (BJT) SS GP XSTR NPN
MSD601-ST1G: Transistors Bipolar (BJT) SS GP XSTR NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 50 V | ||
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 0.1 A | ||
DC Collector/Base Gain hfe Min : | 290 at 2 mA at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-59 | Packaging : | Reel |
Technical/Catalog Information | MSD601-ST1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 290 @ 2mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | SC-59-3, SMT3, SOT-346, TO-236 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MSD601 ST1G MSD601ST1G MSD601 ST1GOS ND MSD601ST1GOSND MSD601-ST1GOS |